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| DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 350V ** Die in wafer form. RDS(ON) (max) 10 IDSS (min) 200mA Order Number / Package TO-243AA* DN3535N8 Die** DN3535NW Product marking for TO-243AA: DN5S* Where *= 2-week alpha date code * Same as SOT-89. Products shipped on 2000 piece carrier tape reels. Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Advanced DMOS Technology These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Package Option D Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSX BVDGX 20V 55C to +150C 300C G D S TO-243AA (SOT-89) 12/13/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. DN3535 Thermal Characteristics Package TO-243AA ID (continuous)* 230mA ID (pulsed) 500mA Power Dissipation @ TA = 25C 1.6W jc ja IDR* 230mA IDRM 500mA C/W 15 C/W 78 * ID (continuous) is limited by max rated Tj. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Souce Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current Min 350 -1.5 -3.5 4.5 100 1.0 1.0 IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 800 200 360 40 10 15 20 20 30 1.8 200 10 1.1 Typ Max Unit V V mV/C nA A mA mA %/C mg Conditions VGS = -5.0V, ID = 1.0A VDS = 15V, ID = 10A VDS = 15V, ID = 10A VGS = 20V, VDS = 0V VGS = -5.0V, VDS = Max Rating VGS = -5.0V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = 15V VGS = 0V, ID = 150mA VGS = 0V, ID = 150mA ID = 100mA, VDS=10V VGS = -5.0V, VDS = 25V, f =1.0Mhz VDD = 25V, ID = 150mA, RGEN = 25, VGS = 0V to -10V VGS = -5.0V, ISD = 150mA VGS = -5.0V, ISD = 150mA pF ns V ns Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD 0V 90% 10% t(ON) INPUT -10V PULSE GENERATOR Rgen t(OFF) tr td(OFF) tF 10% td(ON) VDD 10% INPUT OUTPUT 0V 90% 90% 2 RL OUTPUT D.U.T. DN3535 Typical Performance Curves Output Characteristics 1.0 VGS = +2.0V 0V 0.8 -0.5V Saturation Characteristics 1.0 VGS = +2V 0.8 0V -0.5V -0.8V ID (Amperes) -0.8V 0.6 -1.0V ID (Amperes) 0.6 -1V 0.4 -1.5V 0.2 -2V 0.0 0 50 100 150 200 250 300 350 0.4 -1.5V 0.2 -2V 0.0 0 2 4 6 8 10 VDS (Volts) Transconductance vs. Drain Current 1.0 VDS = 10V 0.8 TA = -55C 1.5 2.0 VDS (Volts) Power Dissipation vs. Case Temperature TO-243AA GFS (siemens) 0.6 TA = 25C 0.4 TA = 125C 0.2 PD (Watts) 1.0 0.5 0.0 0.0 0.0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 ID (Amperes) Maximum Rated Safe Operating Area 10 1.0 TC (C) Thermal Response Characteristics TO-243AA (pulsed) 1.0 Thermal Resistance (normalized) 0.8 TO-243AA P D = 1.6W T C = 25C ID (amperes) TO-243AA (DC) 0.6 0.1 0.4 0.01 T A =25C 0.2 0.001 1 10 100 1000 0 0.001 0.01 0.1 1.0 10 VDS (Volts) tp (seconds) 3 DN3535 Typical Performance Curves BVDSV Variation with Temperature 1.2 ID = 1mA VGS = -5V On Resistance vs. Drain Current 25 BVDSV (Normalized) 20 1.1 RDS(ON) (ohms) VGS = 0V 15 1.0 10 0.9 5 0.8 -50 0 50 100 150 0 0.0 0.2 0.4 0.6 0.8 1.0 TJ (C) Transfer Characteristics 1300 VDS = 10V 1100 TA = -55C ID (Amperes) VGS(OFF) and RDS(ON) w/ Temperature 1.4 2.4 VGS(OFF) (normalized) 1.2 VGS(OFF) @ 10A 2.0 900 TA = 25C 700 TA = 125C 1.0 1.6 500 0.8 RDS(on) @ 0V, 150mA 1.2 300 0.6 0.8 100 0 -3 -2 -1 0 1 2 0.4 -50 -25 0 25 50 75 0.4 100 125 150 VGS (Volts) Capacitance vs. Drain Source Voltage 350 VGS = -5V 300 2 1 3 ID = 150mA TJ (C) Gate Drive Dynamic Characteristics C (picofarads) 250 200 VGS (volts) 0 -1 -2 -3 -4 -5 VDS=40V 150 CISS 100 50 0 0 CRSS 10 20 COSS 30 40 0 500 1000 1500 2000 VDS (volts) QG (picocoulombs) 12/13/010 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) ID (Milliamperes) |
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